According to the news, Changjiang Storage is preparing the next generation 3D NAND flash memory architecture Xtacking 4.0

On November 17th, IT Home reported that according to a document seen by Tom's Hardware, Changjiang Storage is preparing its next generation 3D NAND flash memory architecture - Xtacking 4.0. The company has no plans to increase the number of layers of the two Xtacking 4.0 devices currently under development, but over time, the series may become more widespread.Crystal stack Xtacking is a core technology brand of Yangtze River storage, which can process peripheral circuits and storage units on two independent wafers. This facilitates the selection of more advanced logic processes, allowing NAND to achieve higher I/O interface speed and more operational functions. After each wafer is completed, the stack Xstacking technology only requires one processing step to bond the two wafers into one through billions of vertical interconnect channels (VIAs).

According to the report, Changjiang Storage has disclosed its Xtapping 4.0 product lineup to some industry peers, including 128 layer X4-9060 3D TLC and 232 layer X4-9070 3D TLC NAND devices, which can ultimately be used to build some more high-end SSDs.

The company plans to use string stacking for both. Therefore, technically speaking, it will produce 3D NAND arrays with 64 and 116 active layers, allowing wafer fab equipment manufacturers to continue providing them with the necessary tools.

It is currently unclear what advantages Changjiang Storage's Xtacking 4.0 flash memory will bring, but Changjiang Storage typically improves data transfer rate and storage density on each new node.

(From IT Home)