Samsung officially launches its first 36GB HBM3E 12H DRAM: innovative 12 layer stacking, breaking the record for capacity once again

This product is not only Samsung's largest HBM product to date, but also supports a maximum bandwidth of 1280GB/s 24/7, with a product capacity of up to 36GB.

Compared to Samsung's 8-layer stacked HBM3 8H, HBM3E 12H has achieved over 50% improvement in bandwidth and capacity. Yongcheol Bae, Executive Vice President of Samsung's Memory Product Planning Team, said, "Currently, artificial intelligence service providers in the industry are increasingly in need of higher capacity HBMs, and our new product HBM3E 12H is designed to meet this demand."

The newly released HBM3E 12H adopts hot pressed non-conductive thin film (TC NCF) technology, maintaining the height consistency of 12 and 8-layer stacked products to meet the current HBM packaging requirements. This technology can not only alleviate the chip bending problem caused by thin films, but also bring more benefits in higher stacking. Samsung has been committed to reducing the thickness of non-conductive thin film (NCF) materials, minimizing the gap between chips to 7 micrometers (µ m), and eliminating the gap between layers. These efforts have increased the vertical density of HBM3E 12H by more than 20% compared to HBM3 8H.

Samsung's hot pressed non-conductive thin film (TC NCF) technology also improves the thermal performance of HBM by allowing the use of different sized bumps between chips. During the chip bonding process, smaller protrusions are used for signal transmission areas, while larger protrusions are placed in areas that require heat dissipation. This innovative method helps to improve product yield.

According to Samsung Electronics, compared to the HBM3 8H, the HBM3E 12H is expected to increase the average speed of artificial intelligence training by 34% after being equipped with artificial intelligence applications, and the number of inference service users will also increase by more than 11.5 times.

Currently, Samsung has started providing HBM3E 12H samples to customers and is expected to begin mass production in the second half of this year. This technological breakthrough marks Samsung's continuous efforts and technological leadership in the core technology field of multi-layer stacked HBM.

Time: 2024-02-28
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Samsung Electronics announced today the official release of its first 12 layer stacked HBM3E DRAM product - HBM3E 12H, marking a new technological breakthrough for Samsung in the HBM field.