According to information obtained by foreign media Blocks&Files from two interviewed industry analysts, this innovative memory technology seems difficult to achieve commercial mass production. Nevertheless, the innovation demonstrated by this technology is still expected to be reflected in future memory products.
Micron's NVDRAM memory is based on the principle of ferroelectricity and has non-volatile properties similar to NAND flash memory, while also achieving high durability and low latency performance similar to DRAM. This new type of memory adopts double-layer 3D stacking, setting a new record for ferroelectric memory with a capacity density of 32Gb. Micron has tested NVDRAM samples according to the LPDDR5 specification and believes they are suitable for harsh AI loads. However, both interviewed analysts expressed doubts about the commercialization prospects of Micron NVDRAM.
Objective Analysis analyst Jim Handy pointed out that Micron's 32Gb NVDRAM has three important technological advancements:
Jim Handy stated that Micron NVDRAM uses zirconium (Zr) doped hafnium oxide (HfO ₂) high dielectric constant material in capacitors, effectively reducing memory refresh rate and power consumption. This improvement also reduces the volume of capacitors in DRAM, further enhancing storage density. However, despite these impressive technological advancements, Jim Handy also stated that there are still indications that the NVDRAM will not be mass-produced.
Mark Webb, an analyst from MKW Ventures, believes that Micron has invested a significant amount of time and effort into the project. However, when his paper appeared at the IEDM conference, he stated that either the product was about to be launched or it was cancelled for unknown reasons. His conclusion is that he does not believe that this specific version of the product will be in mass production.