Samsung announces CMM-B CXL memory cartridge module, HBM3E 12H memory planned for mass production in the first half of the year

This device called CMM-B (CXL Memory Module Box) can accommodate 8 E3. S specification CMM-D CXL memory modules, achieving a memory capacity of 2TB. It can provide a data bandwidth of 60GB/s with a delay of 596 nanoseconds, suitable for various application scenarios such as data analysis, in memory databases, and AI. Samsung has also partnered with Supermicro to launch a rack level hardware solution based on CMM-B, which can share memory pools among three devices, further improving memory capacity and bandwidth.In addition, Samsung also showcased its 12 layer stacked HBM3E memory at the Memory Con 2024 conference and stated that the product plans to begin mass production in the first half of this year. According to the North Korean Daily, Samsung also revealed that the 128GB DDR5 memory module based on 32Gb DRAM particles will be put into mass production in the first half of the year. In the future, Samsung plans to apply a buffer chip at the bottom of the HBM4 memory stack as a control device.